Mfr Part #:

CSD16325Q5C

N-Channel MOSFET from Texas Instruments with 25V drain-source voltage rating, 33A (ambient) and 100A (case) continuous drain current, and ultra-low 2mΩ on-resistance. Surface-mount package in 8-PowerTDFN (8-VSON-CLIP 5x6).

✓ Total Stock: 52 pcs

CSD16325Q5C Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	52 pcs On Request	52 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

CSD16325Q5C Description

Short technical summary and product information.

The Texas Instruments CSD16325Q5C is an N-Channel MOSFET utilizing MOSFET (Metal Oxide) technology. It is designed for high-efficiency power management applications requiring low on-resistance and high current capability.

Electrical characteristics include a maximum drain-source voltage of 25V, continuous drain current of 33A at ambient temperature and 100A at case temperature. The ultra-low on-resistance is 2mΩ maximum at 30A drain current and 8V gate-source voltage. Gate threshold voltage is 1.4V maximum at 250µA. Gate-source voltage range is +10V to -8V. Input capacitance is 4000pF at 12.5V, and gate charge is 25nC at 4.5V.

Thermal specifications: maximum power dissipation of 3.1W at ambient temperature, operating junction temperature range from -55°C to 150°C. The device is housed in an 8-PowerTDFN surface-mount package with supplier device package 8-VSON-CLIP (5x6), suitable for compact power designs.

This MOSFET is suitable for high-efficiency power switching applications such as load switches and DC-DC converters, benefiting from its low on-resistance and high current handling.

CSD16325Q5C Quick Information

Product Type: MOSFET

Canonical Name: Texas Instruments CSD16325Q5C N-Channel MOSFET

Subcategory: N-Channel MOSFET

CSD16325Q5C Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

CSD16325Q5C Features

N-Channel MOSFET with 25V drain-source voltage.
Ultra-low 2mΩ on-resistance at 30A and 8V.
High current rating: 33A at ambient, 100A at case.
Surface-mount 8-PowerTDFN package.
Wide operating temperature range -55°C to 150°C.

CSD16325Q5C Applications

Ideal for high-efficiency DC-DC converters.
Suitable for load switching applications.
Used in power management for portable devices.
Applicable in battery protection circuits.

CSD16325Q5C FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the CSD16325Q5C?

25V.

What package does the CSD16325Q5C come in?

8-PowerTDFN surface-mount package, also known as 8-VSON-CLIP (5x6).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the CSD16325Q5C RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

What is the on-resistance of the CSD16325Q5C?

Maximum 2mΩ at 30A drain current and 8V gate-source voltage.

What is the maximum continuous drain current?

33A at ambient temperature and 100A at case temperature.

What is the gate charge of this MOSFET?

Maximum 25nC at 4.5V gate-source voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Texas Instruments
Current	33 A (Ta)
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	3 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	4000 pF @ 12.5 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	3.1 W (Ta)
Rds On (Max) @ Id, Vgs	2 mΩ @ 30 A, 8 V
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+10 V, -8 V
Vgs(th) (Max) @ Id	1.4 V @ 250 µA