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CSD16323Q3C CSD16323Q3C is a 25V N-Channel NexFET power MOSFET from Texas Instruments. It features ultra-low Qg and Qgd, low on-resistance, and is optimized for 5V gate drive applications.
Mfr Part #:

CSD16323Q3C

Available from 1 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD16323Q3C is a 25V N-Channel NexFET power MOSFET from Texas Instruments. It features ultra-low Qg and Qgd, low on-resistance, and is optimized for 5V gate drive applications.
✓ Total Stock: 3,608 pcs

CSD16323Q3C Available from 1 distributor

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Components Technology Group, Inc. ✓
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3,608 pcs
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CSD16323Q3C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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CSD16323Q3C Description

Short technical summary and product information.

The CSD16323Q3C is a 25V N-Channel NexFET power MOSFET designed for low-loss power conversion. It features a typical gate charge (Qg) of 6.2 nC at 4.5V and a maximum on-resistance of 4.5 mΩ at 24A and 8V. The device is avalanche rated at 125 mJ and supports a continuous drain current of 21A at ambient temperature (60A at case temperature). It is optimized for 5V gate drive applications, making it suitable for point-of-load synchronous buck converters in networking, telecom, and computing systems. The MOSFET is housed in a surface mount 8-PowerTDFN package (8-SON-EP 3x3 mm) and is Pb-free and halogen-free.

CSD16323Q3C Quick Information

Product Type: MOSFET
Series: NexFET
Canonical Name: CSD16323Q3C N-Channel Power MOSFET
Subcategory: Single MOSFET

CSD16323Q3C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD16323Q3C Features

  • Ultra-low gate charge of 6.2 nC typical.
  • Low on-resistance: 3.8 mΩ typical at 8V.
  • Avalanche rated at 125 mJ.
  • Pb-free and halogen-free terminals.
  • Surface mount 8-PowerTDFN package.

CSD16323Q3C Applications

  • Used in point-of-load synchronous buck converters.
  • Ideal for networking and telecom power systems.
  • Optimized for control or synchronous FET applications.
  • Suitable for 5V gate drive applications.

CSD16323Q3C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of CSD16323Q3C?

25V.

What package is the CSD16323Q3C available in?

8-PowerTDFN surface mount package, also known as 8-SON-EP (3x3).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the CSD16323Q3C RoHS compliant?

Yes, it is RoHS compliant with Pb-free terminal plating.

What is the typical on-resistance (Rds(on)) of CSD16323Q3C?

Typical Rds(on) is 3.8 mΩ at Vgs=8V, 4.4 mΩ at 4.5V, and 5.4 mΩ at 3V.

What is the total gate charge (Qg) of CSD16323Q3C?

Typical total gate charge is 6.2 nC at Vgs=4.5V, with a maximum of 8.4 nC.

What is the maximum continuous drain current?

21A at ambient temperature (Ta=25°C) and 60A at case temperature (Tc=25°C).

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