| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,561 pcs
|
39561 pcs | On Request | 1 | On Request | On Request | 2137+ | On Request | On Request | |
|
6,251 pcs
|
6251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
120 pcs
|
120 pcs | On Request | 1 | On Request | On Request | 201523 | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Termination | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
CSD16323Q3 is a 25V N-Channel NexFET power MOSFET from Texas Instruments. It is designed for power conversion applications and optimized for 5V gate drive. The device offers low on-resistance of 5.5mΩ (maximum) at VGS=4.5V and 4.5mΩ at VGS=8V, along with ultra-low gate charge (typical Qg of 6.2nC) for efficient switching. It supports continuous drain current of 21A (silicon limited at TC=25°C) and a package limit of 60A.
With a maximum drain-to-source voltage of 25V and a gate threshold voltage of 1.1V typical (1.4V maximum), this MOSFET is well suited for control and synchronous FET applications in point-of-load synchronous buck converters used in networking, telecom, and computing systems. The logic-level gate drive capability allows operation with 3V to 8V drive voltages.
Packaged in an 8-PowerTDFN (8-VSON-CLIP) surface-mount package measuring 3.3mm x 3.3mm, the device offers low thermal resistance and is avalanche rated. It features lead-free terminal plating and is halogen free. The operating temperature range is -55°C to 150°C junction temperature.
Texas Instruments rates this device as RoHS compliant and halogen free. It is intended for use in power management and DC-DC conversion circuits where low conduction and switching losses are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.82 | $1.82 |
| 10+ | $1.16 | $1.16 |
| 50+ | $0.87 | $0.87 |
| 100+ | $0.78 | $0.78 |
| 500+ | $0.61 | $0.61 |
| 2,500+ | $0.50 | $0.50 |
| 7,500+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 25V.
The operating temperature range is -55°C to 150°C (junction temperature).
It is available in an 8-PowerTDFN surface-mount package, also designated as 8-VSON-CLIP (3.3x3.3).
Yes, the manufacturer states RoHS compliance and lead-free terminal plating; the device is also halogen free.
The maximum Rds(on) is 5.5mΩ at VGS=4.5V and 4.5mΩ at VGS=8V (at Id=24A).
The typical gate charge (Qg) is 6.2nC, with a maximum of 8.4nC at VGS=4.5V.
The continuous drain current is 21A (silicon limited at TC=25°C) and 60A package limited.