CSD13306WT N-Channel MOSFET with 12V drain-source voltage rating and 3.5A continuous drain current. Features low on-resistance of 10.2mOhm at 4.5V gate drive.
Mfr Part #:

CSD13306WT

Available from 4 distributors
Mfr Name: Texas Instruments
Texas Instruments
N-Channel MOSFET with 12V drain-source voltage rating and 3.5A continuous drain current. Features low on-resistance of 10.2mOhm at 4.5V gate drive.
✓ Total Stock: 365,933 pcs
$ Price Range: $0.56 - $1.77

CSD13306WT Available from 4 distributors

✓ Authorised
✓ Non-Authorised

CSD13306WT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD13306WT Description

Short technical summary and product information.

The CSD13306WT is an N-Channel MOSFET from Texas Instruments, designed for low-voltage switching applications. It features a drain-source voltage (Vdss) of 12V and a maximum continuous drain current of 3.5A at ambient temperature.

 

Key electrical characteristics include a low on-resistance of 10.2mOhm at 1.5A drain current and 4.5V gate drive, with a gate threshold voltage of 1.3V at 250µA. The device has a maximum gate charge of 11.2nC at 4.5V and input capacitance of 1370pF at 6V drain-source voltage, enabling efficient switching.

 

The MOSFET is housed in a 6-UFBGA/DSBGA package (6-DSBGA 1x1.5) and is surface mountable. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.9W at ambient temperature.

 

This device is suitable for load switching, DC-DC conversion, and other low-voltage power management applications where small footprint and low on-resistance are required.

CSD13306WT Quick Information

Product Type: MOSFET
Canonical Name: CSD13306WT N-Channel MOSFET
Subcategory: N-Channel MOSFET

CSD13306WT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

CSD13306WT Estimated Pricing

Qty Low High
1+ $1.77 $1.77
10+ $1.12 $1.12
50+ $0.84 $0.84
100+ $0.75 $0.75
250+ $0.65 $0.65
750+ $0.56 $0.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD13306WT Features

  • N-Channel MOSFET with 12V drain-source voltage.
  • 3.5A continuous drain current rating.
  • Low on-resistance of 10.2mOhm at 4.5V.
  • Surface mount 6-DSBGA package.
  • Wide operating temperature range -55°C to 150°C.

CSD13306WT Applications

  • Load switching in low-voltage circuits.
  • DC-DC converter power stage.
  • Battery management and protection.
  • Portable device power distribution.

CSD13306WT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the CSD13306WT?

-55°C to 150°C (junction).

What package does the CSD13306WT come in?

6-UFBGA, DSBGA (6-DSBGA 1x1.5).

Is the CSD13306WT RoHS compliant?

RoHS3 Compliant (unverified).

What is the drain-source voltage rating?

12V.

What is the maximum drain current?

3.5A at ambient temperature.

What is the on-resistance of the CSD13306WT?

10.2mOhm maximum at 1.5A drain current and 4.5V gate drive.

What is the gate threshold voltage?

1.3V maximum at 250µA drain current.

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