| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
409,231 pcs
|
409231 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
138,000 pcs
|
138000 pcs | On Request | 1 | On Request | On Request | 1344+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Height | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD13303W1015 is a 12V N-Channel NexFET power MOSFET from Texas Instruments designed for low on-resistance and low gate charge in a compact footprint. It features a maximum drain-source voltage of 12V and a continuous drain current of 3.5A at Tc=25°C (silicon and package limited). The device offers ultra-low on-resistance: 20mOhm max at Vgs=4.5V and 23mOhm max at Vgs=2.5V, making it suitable for low-voltage switching applications.
With a typical gate threshold voltage of 0.85V and logic-level drive capability, the CSD13303W1015 can be driven by low-voltage control signals. Gate charge is minimized with a typical total gate charge of 3.9nC at Vgs=4.5V, enabling fast switching and reduced switching losses. Input capacitance is 715pF max at Vds=6V.
The device is housed in a 6-pin DSBGA (6-DSBGA) package measuring 1mm x 1.5mm with a low profile height of 0.62mm, ideal for space-constrained designs. It supports surface mount mounting and operates over a junction temperature range of -55°C to 150°C. The CSD13303W1015 is RoHS compliant, lead-free, and halogen free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.78 | $0.78 |
| 10+ | $0.49 | $0.49 |
| 50+ | $0.36 | $0.36 |
| 100+ | $0.31 | $0.31 |
| 500+ | $0.24 | $0.24 |
| 1,359+ | $0.22 | $0.22 |
| 3,000+ | $0.18 | $0.18 |
| 9,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 12 V.
It comes in a 6-pin DSBGA (6-DSBGA) package measuring 1 mm x 1.5 mm with a height of 0.62 mm.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant, lead-free, and halogen free.
The typical gate threshold voltage (Vgs(th)) is 0.85 V at Id=250 µA.
The maximum drain-source on-resistance is 20 mΩ at Id=1.5 A and Vgs=4.5 V.
The typical total gate charge (Qg) is 3.9 nC at Vgs=4.5 V.