| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,618 pcs
|
25618 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
782 pcs
|
782 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD13201W10 is an N-Channel power MOSFET from Texas Instruments' NexFET family. It features a drain-source voltage rating of 12V and a continuous drain current of 1.6A (silicon and package limited). The device offers a maximum on-resistance of 34mΩ at Vgs=4.5V and 39mΩ at Vgs=2.5V, enabling efficient low-voltage switching.
This logic-level MOSFET can be driven by 1.8V and 4.5V gate voltages, making it suitable for low-power and battery-operated designs. It exhibits low gate charge (typical 2.3nC total, 0.3nC gate-drain, 0.5nC gate-source) and low input capacitance (462pF at Vds=6V), which reduces switching losses.
The device is housed in a 4-pin DSBGA (1x1mm) package with a low profile of 0.62mm height. It is rated for operation from -55°C to 150°C junction temperature and has a maximum power dissipation of 1.2W at ambient temperature. The package is Pb-free, RoHS compliant, and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.60 | $0.60 |
| 10+ | $0.37 | $0.37 |
| 50+ | $0.27 | $0.27 |
| 100+ | $0.24 | $0.24 |
| 500+ | $0.18 | $0.18 |
| 3,000+ | $0.14 | $0.14 |
| 9,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 12V.
The maximum continuous drain current is 1.6A (silicon limited at TC=25°C and package limited).
The maximum on-resistance is 34mΩ at Vgs=4.5V and Id=1A.
It comes in a 4-pin DSBGA (1x1mm) package, also known as 4-DSBGA.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and also Pb-free and halogen-free.
The typical total gate charge is 2.3nC at Vgs=4.5V.