| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,100 pcs
|
17100 pcs | On Request | 1 | On Request | On Request | 2015 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature |
The CS2N60 is a Silicon N-Channel Enhanced VDMOSFET manufactured by CS CORP. It utilizes a self-aligned planar technology designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency.
Key electrical characteristics include a Drain-to-Source Voltage of 600V and a Continuous Drain Current of 1.5A at 25℃, derating to 0.85A at 100℃. The typical ON-Resistance (RDS(ON)) is 7 Ohms at a gate-source voltage of 10V and a drain current of 0.75A. The Gate Threshold Voltage is typically 2.0V. Dynamic characteristics show a Total Gate Charge of 9.4nC.
The device is packaged in a SOT-223 surface mount package. Applications include power switch circuits for adaptors and chargers.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CS2N60 has a maximum drain-to-source voltage of 600V (datasheet) and a drain-source voltage of 650V (manufacturer page).
The continuous drain current is 1.5A at 25°C and 0.85A at 100°C.
The CS2N60 is available in a SOT-223 surface mount package.
The operating junction and storage temperature range is -55°C to 150°C.
The typical drain-to-source on-resistance is 7Ω at VGS=10V and ID=0.75A.
The typical gate threshold voltage is 2.0V (with VDS = VGS, ID = 250µA).
Yes, the single pulse avalanche energy is 18mJ maximum.