| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CS2837 is a Silicon N-Channel Enhanced VDMOSFET from CS CORP, manufactured using a self-aligned planar technology. This technology aims to reduce conduction losses, improve switching performance, and enhance avalanche energy.
Key electrical characteristics include a drain-to-source voltage of 500V, a continuous drain current of 20A at 25°C (13A at 100°C), and a pulsed drain current of 80A. The device offers a low ON resistance, with a typical value of 0.18Ω and a maximum of 0.26Ω at VGS=10V and ID=10A. Dynamic characteristics show a typical total gate charge of 96nC.
The MOSFET is housed in a TO-3P(N) package, which is RoHS compliant. Its applications include automotive, DC motor control, and Class D amplifiers, where system miniaturization and higher efficiency are desired.
Absolute maximum ratings specify a gate-to-source voltage of ±30V, single pulse avalanche energy of 1500mJ, and power dissipation of 230W at 25°C. The operating and storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 500V.
The continuous drain current is 20A at 25°C.
The typical ON resistance is 0.18Ω.
The package type is TO-3P(N).
The total gate charge is 96nC.