| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The CPH6445-TL-W is an N-Channel MOSFET from On Semiconductor designed for medium voltage power management applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current rating of 3.5A at ambient temperature. The device offers a low on-resistance of 117mOhm at 1.5A and 10V gate drive, enabling efficient power switching.
With a typical gate charge of 6.8nC at 10V, this MOSFET is suitable for high-frequency switching circuits. The input capacitance is 310pF at 20V drain-source voltage, supporting fast switching transitions. The device is housed in a SOT-23-6 surface mount package with a supplier device package designation of 6-CPH, making it ideal for compact designs.
Thermal management is supported by a maximum power dissipation of 1.6W at ambient temperature, and the junction temperature can reach up to 150°C. The gate-source voltage tolerance is ±20V, providing robust drive margin. Compliance with RoHS3 and REACH unaffected status is indicated, though unverified.
60V maximum.
SOT-23-6 surface mount package.
150°C (TJ).
Yes, RoHS3 compliant (unverified).
6.8 nC at 10V gate-source voltage.
310 pF at 20V drain-source voltage.
3.5A at ambient temperature.