| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,445 pcs
|
2445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | 16/ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The CPH6443-TL-H is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for low-voltage power switching and load-switching applications. The device is rated for a maximum drain-to-source voltage (Vdss) of 35V and a maximum drain current (Id) of 6A at ambient temperature (Ta). The on-resistance (Rds(on)) is specified at a maximum of 37mΩ with a gate-drive voltage of 10V and a drain current of 3A, enabling efficient power handling in compact circuits.
The MOSFET operates with a gate-source drive voltage of 4V or 10V, and the maximum gate-source voltage is ±20V. It features low gate charge (Qg) of 10nC at Vgs=10V, which supports fast switching and reduces driver losses, and a maximum input capacitance (Ciss) of 470pF at Vds=20V. The device can dissipate up to 1.6W at ambient temperature and operates with a maximum junction temperature of 150°C.
The CPH6443-TL-H is offered in a surface-mount SOT-23-6 package with the supplier device package designator 6-CPH. It is intended for use in DC-DC converters, load switches, power management, and other low-voltage, medium-current circuits. The surface-mount package allows for compact PCB layouts and automated assembly.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.22 | $0.22 |
| 6,000+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 35V.
The maximum drain current (Id) is 6A at ambient temperature (Ta).
The maximum on-resistance (Rds(on)) is 37mΩ at Vgs=10V and Id=3A.
It is available in a surface-mount SOT-23-6 package (supplier device package 6-CPH).
The maximum operating junction temperature is 150°C.
The maximum gate charge (Qg) is 10nC at Vgs=10V.
It is listed as RoHS3 compliant in the product data.
