| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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201 pcs
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201 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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This is a P-Channel enhancement-mode MOSFET from Sanyo Denki, part number CPH6350-TL-E. It is designed for surface-mount applications requiring efficient power switching.
Key electrical specifications include a drain-source voltage (Vdss) of 30V, continuous drain current of 6A at 25°C, and a maximum on-resistance of 43mΩ at 3A drain current with 10V gate drive. The gate threshold voltage is not specified but drive voltage range is 4V to 10V. Maximum gate charge is 13nC at 10V, and input capacitance is 600pF at 10V drain-source.
The device is housed in a SOT-23-6 Thin or TSOT-23-6 package, with a supplier device package designation of 6-CPH. It supports surface mount mounting and has a maximum power dissipation of 1.6W at 25°C ambient.
This MOSFET is suitable for load switching, power management, and other low-voltage applications where P-Channel devices are preferred for high-side switching. The compact package allows for space-constrained designs.
30V.
SOT-23-6 Thin, TSOT-23-6.
RoHS3 Compliant (unverified).
6A at 25°C.
43mΩ maximum at 3A, 10V.
13nC maximum at 10V.
600pF maximum at 10V.