| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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75,000 pcs
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75000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CPH6347-TL-W is a P-channel power MOSFET from ON Semiconductor in a SOT-23-6 Thin (TSOT-23-6) surface mount package. It uses MOSFET (metal oxide) technology and is designed for low voltage applications. The device is supplied in tape and reel (TL) packaging.
The FET has a drain-to-source breakdown voltage of -20V and a continuous drain current rating of -6A (Ta). Pulse drain current is rated at -24A (PW≤10μs, duty cycle≤1%). The maximum gate-to-source voltage is ±12V. On-resistance ranges from 39mΩ max at VGS=-4.5V (ID=-3A) to 102mΩ max at VGS=-1.8V (ID=-0.6A). Gate threshold voltage is between -0.4V and -1.4V.
Switching characteristics include input capacitance of 860pF, output capacitance of 170pF, and reverse transfer capacitance of 130pF (measured at VDS=-10V, f=1MHz). Total gate charge is 10.5nC at VGS=-4.5V. Turn-on delay time is 10ns, rise time is 48ns, turn-off delay is 100ns, and fall time is 78ns. The body diode forward voltage is typically 0.82V and max 1.5V.
Power dissipation is 1.6W when mounted on a ceramic substrate (900mm² × 0.8mm), with a junction-to-ambient thermal resistance of 78.1°C/W. The device operates up to a junction temperature of 150°C and can be stored from -55°C to +150°C. It is RoHS compliant, Pb-Free, and halogen free.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is -20V, and the gate-to-source voltage is rated at ±12V.
The device is available in SOT-23-6 Thin (TSOT-23-6) surface mount package, with supplier device package 6-CPH.
The junction temperature is rated up to 150°C, and storage temperature range is -55°C to +150°C.
Yes, the datasheet states the device is RoHS compliant, Pb-Free, and halogen free.
Continuous drain current is -6A (DC). Pulse drain current is -24A with pulse width ≤10μs and duty cycle ≤1%.
RDS(on) is 39mΩ max at VGS=-4.5V, 66mΩ max at VGS=-2.5V, and 102mΩ max at VGS=-1.8V.
The recommended drive voltages are 1.8V and 4.5V.