| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology |
The CPH6311-TL-E is a P-Channel enhancement-mode MOSFET from On Semiconductor. It features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current of 5 A at ambient temperature (Ta). The device has a maximum drain-source on-resistance of 42 mOhm at a gate-source voltage of 4.5 V and a drain current of 3 A.
This MOSFET offers an input capacitance of 1230 pF at 10 V drain-source and a maximum gate charge of 31 nC at 10 V gate-source. The maximum power dissipation is 1.6 W at ambient temperature with a maximum junction temperature of 150 °C.
The CPH6311-TL-E is designed for surface mount assembly and is available in a SOT-23-6 Thin, TSOT-23-6 package with a supplier device package designation of 6-CPH. It is well-suited for load switching, battery protection, and general-purpose power management applications where a low on-resistance and compact footprint are required.
| Qty | Low | High |
|---|---|---|
| 1,137+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20 V.
The continuous drain current is 5 A at ambient temperature (Ta).
The maximum on-resistance is 42 mOhm at Vgs = 4.5 V and Id = 3 A.
It comes in a SOT-23-6 Thin, TSOT-23-6 package with supplier device package 6-CPH.
The maximum junction temperature is 150 °C.
It is listed as RoHS3 Compliant but this status is unverified.