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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,970 pcs
|
41970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| Base Current | |
| Base-to-Emitter Saturation Voltage | |
| Collector Current (Pulse) | |
| Collector Cutoff Current | |
| Collector-to-Base Breakdown Voltage | |
| Collector-to-Base Voltage | |
| Collector-to-Emitter Saturation Voltage | |
| Collector-to-Emitter Voltage | |
| Current Rating (Amps) | |
| Cutoff Voltage | |
| DC Current Gain | |
| Drain Current | |
| Drain-to-Source Voltage | |
| Emitter Cutoff Current | |
| Emitter-to-Base Voltage | |
| Forward Transfer Admittance | |
| Gain-Bandwidth Product | |
| Gate Current | |
| Gate Cutoff Current | |
| Gate-to-Drain Breakdown Voltage | |
| Gate-to-Drain Voltage | |
| Input Capacitance | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Noise Figure | |
| Output Capacitance | |
| Power Dissipation (FET) | |
| Power Dissipation (Transistor) | |
| Reverse Transfer Capacitance | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Total Power Dissipation | |
| Transistor Type | |
| Voltage |
The CPH5905H-TL-E is a composite semiconductor device from On Semiconductor that integrates an N-Channel JFET and an NPN bipolar transistor into a single CPH5 package (SC-74A, SOT-25). This composite type improves mounting efficiency by combining two discrete chips into one package, with the drain and emitter terminals shared.
Electrical specifications include a maximum drain-to-source voltage of 15V, a maximum gate-to-drain voltage of -15V, and a maximum drain current of 50mA for the JFET. The NPN transistor offers a collector-to-emitter voltage of 50V, a collector current of 150mA (300mA pulse), and a DC current gain of 135 to 400. The device is rated for a total power dissipation of 500mW when mounted on a ceramic board (600mm2×0.8mm).
The JFET section provides a low noise figure of 1.0dB and an input capacitance of 10pF, making it suitable for amplifier applications. The NPN transistor has a gain-bandwidth product of 200MHz, supporting high-frequency signal processing.
The CPH5905H-TL-E is supplied in a surface-mount CPH5 package with gull-wing leads, available in tape and reel packaging with a standard quantity of 3000 pieces per reel. The device is designed for general amplifier applications where a combination of JFET and bipolar transistor characteristics is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.95 | $0.95 |
| 10+ | $0.59 | $0.59 |
| 100+ | $0.38 | $0.38 |
| 500+ | $0.29 | $0.29 |
| 1,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSX) is 15V.
The maximum collector-to-emitter voltage (VCEO) is 50V.
The maximum collector current (IC) is 150mA, with a pulse current rating of 300mA.
The CPH5905H-TL-E is available in a CPH5 package, which is also known as SC-74A or SOT-25.
The storage temperature range is -55°C to +150°C, and the maximum junction temperature is 150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.