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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,970 pcs
|
17970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Allowable Power Dissipation (FET) | |
| Applications | |
| Base Current | |
| Base-to-Emitter Saturation Voltage | |
| Collector Current | |
| Collector Current (Pulse) | |
| Collector Cutoff Current | |
| Collector Power Dissipation | |
| Collector-to-Base Breakdown Voltage | |
| Collector-to-Base Voltage | |
| Collector-to-Emitter Breakdown Voltage | |
| Collector-to-Emitter Saturation Voltage | |
| Collector-to-Emitter Voltage | |
| Current Rating (Amps) | |
| Cutoff Voltage | |
| DC Current Gain | |
| Drain Current (Maximum) | |
| Drain Current (Minimum/Maximum @ VDS=5 V, VGS=0 V) | |
| Drain-to-Source Voltage | |
| Emitter Cutoff Current | |
| Emitter-to-Base Voltage | |
| Forward Transfer Admittance | |
| Gain-Bandwidth Product | |
| Gate Current | |
| Gate Cutoff Current | |
| Gate-to-Drain Breakdown Voltage | |
| Gate-to-Drain Voltage | |
| Input Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Output Capacitance | |
| Package Type | |
| Reverse Transfer Capacitance | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape and Reel | |
| Total Power Dissipation | |
| Transistor Type | |
| Voltage |
CPH5905G-TL-E is a composite transistor from On Semiconductor that combines an N-Channel JFET and an NPN bipolar transistor in a single CPH5 surface-mount package. This integration improves mounting efficiency and reduces board space. The device contains a 2SK3357-equivalent JFET chip and a 2SC4639-equivalent NPN transistor chip, with shared drain and emitter connections.
The FET section features a maximum drain-to-source voltage of 15 V, a gate-to-drain voltage of -15 V, and a drain current rating of 50 mA. Typical drain current ranges from 10.0 to 32.0 mA at VDS=5V and VGS=0V, with a forward transfer admittance of 35 mS and input capacitance of 10 pF. The NPN transistor section is rated for 50 V collector-to-emitter voltage, 55 V collector-to-base voltage, and 150 mA continuous collector current (300 mA pulse). DC current gain spans 135 to 400, and gain-bandwidth product is 200 MHz.
Power dissipation is 350 mW for each section, with a total power dissipation of 500 mW when mounted on a ceramic board (600mm2×0.8mm). Junction temperature is rated up to 150°C, and storage temperature range is -55°C to +150°C. The CPH5 package conforms to SC-74A / SOT-25 standards and is supplied in tape and reel packaging with 3000 pieces per reel.
This device is suitable for general-purpose switching and amplification in compact, low-power applications where space is at a premium.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.21 | $0.21 |
| 6,000+ | $0.19 | $0.19 |
| 9,000+ | $0.18 | $0.18 |
| 15,000+ | $0.17 | $0.17 |
| 21,000+ | $0.17 | $0.17 |
| 30,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CPH5905G-TL-E is available in a CPH5 surface-mount package, also known as SC-74A or SOT-25.
The CPH5905G-TL-E is listed as RoHS3 compliant, though this is unverified.
The FET section has a maximum drain-to-source voltage of 15V and gate-to-drain voltage of -15V. The transistor section has a maximum collector-to-emitter voltage of 50V and collector-to-base voltage of 55V.
The maximum continuous collector current is 150mA, with a pulse current rating of 300mA.
The total power dissipation is 500mW when mounted on a ceramic board (600mm2×0.8mm).
The storage temperature range is -55°C to +150°C.
The CPH5905G-TL-E is supplied in tape and reel packaging with 3000 pieces per reel.