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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,000 pcs
|
72000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| Base Current | |
| Base-to-Emitter Saturation Voltage | |
| Collector Current (Pulse) | |
| Collector Cutoff Current | |
| Collector-to-Base Breakdown Voltage | |
| Collector-to-Base Voltage | |
| Collector-to-Emitter Saturation Voltage | |
| Current Rating (Amps) | |
| Cutoff Voltage | |
| DC Current Gain | |
| Drain Current | |
| Drain Current (IDSS) | |
| Drain-to-Source Voltage | |
| Emitter Cutoff Current | |
| Emitter-to-Base Voltage | |
| Forward Transfer Admittance | |
| Gain-Bandwidth Product | |
| Gate Current | |
| Gate Cutoff Current | |
| Gate-to-Drain Breakdown Voltage | |
| Gate-to-Drain Voltage | |
| Input Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Output Capacitance | |
| Power Dissipation (@ Mounted on ceramic board (600 mm²×0.8 mm), Ta=25 °C) | |
| Reverse Transfer Capacitance | |
| Standard Package Qty | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Total Power Dissipation | |
| Transistor Type | |
| Voltage |
The CPH5902H-TL-E from On Semiconductor is a composite transistor that integrates an N-Channel JFET (equivalent to 2SK2394) and an NPN bipolar transistor (equivalent to 2SC4639) in a single CPH5 package. This combination saves board space and simplifies design by providing two active devices in one surface-mount component.
The JFET section offers a drain-to-source voltage (VDSX) of 15V, drain current (ID) of 50mA, and a drain current IDSS range of 10 to 32mA at VDS=5V. It features a forward transfer admittance (|yfs|) of 24 to 38mS, input capacitance (Ciss) of 10pF, and a low noise figure (NF) of 1.0dB typical, making it suitable for low-noise amplifier stages.
The NPN transistor section provides a collector-to-emitter voltage (VCEO) of 50V, collector current (IC) of 150mA (300mA pulse), and a DC current gain (hFE) of 135 to 400 at VCE=6V, IC=1mA. It also offers a gain-bandwidth product (fT) of 200MHz typical and output capacitance (Cob) of 1.7pF.
The device is housed in a CPH5 package (SC-74A, SOT-25) and is surface mountable. It is supplied in tape and reel with a standard quantity of 3000 pieces per reel. Total power dissipation is 500mW when mounted on a ceramic board (600mm²×0.8mm). The storage temperature range is -55 to +150°C and the junction temperature rating is 150°C.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (VDSX) is rated at 15V.
The collector-to-emitter voltage (VCEO) is rated at 50V.
The device is packaged in CPH5 (SC-74A, SOT-25).
The junction temperature (Tj) is rated at 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.
The DC current gain (hFE) ranges from 135 to 400 at VCE=6V, IC=1mA.
The gain-bandwidth product (fT) is 200 MHz typical at VCE=6V, IC=10mA.