CPH5902G-TL-E

The CPH5902G-TL-E from On Semiconductor is a composite semiconductor device that combines an N-Channel JFET and an NPN bipolar transistor in a single CPH5 surface-mount package. This integration improves mounting efficiency and reduces board space. The JFET section features a maximum drain-to-source voltage of 15V, a drain current rating of 50mA, and a gate current of 10mA. The NPN transistor section offers a collector-to-emitter voltage of 50V, a collector current of 150mA (300mA pulse), and a DC current gain of 135 to 400 at 1mA.

Key electrical characteristics include a typical forward transfer admittance of 38mS for the JFET and a gain-bandwidth product of 200MHz for the transistor. The device is rated for a total power dissipation of 500mW when mounted on a ceramic board. The junction and storage temperature range is -55°C to 150°C. The package is CPH5 (SC-74A, SOT-25) with a minimum packing quantity of 3000 pieces per reel. The device is marked with the ordering number EN6962C.

This composite transistor is suitable for amplifier applications, combining the high input impedance of the JFET with the high current gain of the bipolar transistor. The drain and emitter are shared, simplifying circuit design. The CPH5902G-TL-E is a direct equivalent to using a 2SK2394 JFET and a 2SC4639 NPN transistor in a single package.