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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
23,760 pcs
|
23760 pcs | On Request | 1 | On Request | On Request | 1326+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| Base Current | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current (Pulse) | |
| Collector Cutoff Current (ICBO) | |
| Collector Dissipation | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Base Voltage | |
| Collector-Emitter Saturation Voltage (Vce Sat) | |
| Current Rating (Amps) | |
| DC Current Gain (hFE) | |
| Drain Current | |
| Drain Current (IDSS) | |
| Drain-source voltage | |
| Emitter Cutoff Current (Iebo) | |
| Emitter-Base Voltage | |
| Forward Transfer Admittance | |
| Gain-Bandwidth Product (fT) | |
| Gate Current | |
| Gate Cutoff Current | |
| Gate-Drain Breakdown Voltage | |
| Gate-Drain Voltage | |
| Gate-Source Cutoff Voltage | |
| Input Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Output Capacitance (Cob) | |
| Packaging Type | |
| Power Dissipation (FET) | |
| Reverse Transfer Capacitance | |
| Standard Package Qty | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Total Power Dissipation | |
| Transistor Type | |
| Voltage |
The CPH5901G-TL-E is a composite transistor integrating an N-channel JFET and an NPN bipolar transistor in a single CPH5 surface-mount package. This design reduces board space and improves mounting efficiency.
The JFET section features a maximum drain-source voltage of 15V, drain current of 50mA, and a low noise figure of 1.5 dB typical at 1kHz. The NPN transistor offers a collector-emitter voltage rating of 50V, continuous collector current of 150mA (300mA pulse), and DC current gain (hFE) from 135 to 400. Typical gain-bandwidth product is 200 MHz.
Both the JFET and NPN chip have a power dissipation of 350 mW each when mounted on a ceramic board, with a total package dissipation of 500 mW. The device supports junction temperatures up to 150°C and is packaged in a CPH5 case (SC-74A, SOT-25).
| Qty | Low | High |
|---|---|---|
| 1,010+ | $0.30 | $0.30 |
| 3,000+ | $0.22 | $0.22 |
| 6,000+ | $0.20 | $0.20 |
| 9,000+ | $0.19 | $0.19 |
| 15,000+ | $0.18 | $0.18 |
| 21,000+ | $0.18 | $0.18 |
| 30,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V
CPH5 (SC-74A, SOT-25) surface mount
RoHS3 Compliant (unverified)
-55 to +150 °C (storage)
200 MHz