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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
99,000 pcs
|
99000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Allowable Power Dissipation (FET) | |
| Applications | |
| Base Current | |
| Base-to-Emitter Saturation Voltage | |
| Collector Current (Maximum) | |
| Collector Cutoff Current | |
| Collector Dissipation | |
| Collector-to-Base Breakdown Voltage | |
| Collector-to-Base Voltage | |
| Collector-to-Emitter Saturation Voltage | |
| Collector-to-Emitter Voltage | |
| Current Rating (Amps) | |
| Cutoff Voltage | |
| DC Current Gain | |
| Drain Current (Maximum) | |
| Drain Current (Minimum/Typical @ VDS=5 V, VGS=0 V) | |
| Drain-to-Source Voltage | |
| Emitter Cutoff Current | |
| Emitter-to-Base Voltage | |
| Forward Transfer Admittance | |
| Gain-Bandwidth Product | |
| Gate Current | |
| Gate Cutoff Current | |
| Gate-to-Drain Breakdown Voltage | |
| Gate-to-Drain Voltage | |
| Input Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Output Capacitance | |
| Reverse Transfer Capacitance | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Total Power Dissipation | |
| Transistor Type | |
| Voltage |
The CPH5901F-TL-E is a composite transistor from On Semiconductor that integrates an N-channel JFET and an NPN bipolar transistor in a single CPH5 package. The JFET section is rated for 15V drain-to-source voltage, while the NPN section supports 50V collector-to-emitter voltage. The device is intended for amplifier applications and offers a total power dissipation of 500mW when mounted on a ceramic board.
Electrical highlights include a JFET drain current of 6.0 to 20.0 mA, a typical noise figure of 1.5 dB, and an input capacitance of 10 pF. The NPN transistor provides a DC current gain of 135 to 400 and a gain-bandwidth product of 200 MHz, enabling use in low-noise and high-frequency amplifier stages.
The CPH5901F-TL-E is supplied in a thin SOT-23-5 (TSOT-23-5 / SC-74A) surface-mount package with a 5-CPH supplier package designator. It is available in tape-and-reel packaging with a minimum order quantity of 3,000 pieces per reel, suitable for automated assembly and high-volume production.
| Qty | Low | High |
|---|---|---|
| 1,748+ | $0.17 | $0.17 |
| 3,000+ | $0.14 | $0.14 |
| 6,000+ | $0.13 | $0.13 |
| 9,000+ | $0.12 | $0.12 |
| 15,000+ | $0.11 | $0.11 |
| 21,000+ | $0.11 | $0.11 |
| 30,000+ | $0.11 | $0.11 |
| 75,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JFET has a drain-to-source voltage rating of 15V and gate-to-drain voltage of -15V; the NPN transistor has a collector-to-emitter voltage rating of 50V.
The CPH5901F-TL-E is supplied in a CPH5 package, also known as SOT-23-5 Thin, TSOT-23-5, or SC-74A, with supplier device package 5-CPH.
The maximum junction temperature is 150°C and the storage temperature range is -55°C to +150°C.
Yes, it is listed as RoHS3 compliant.
The JFET drain current (IDSS) is 6.0 mA minimum and 20.0 mA typical at VDS=5V and VGS=0V.
The NPN transistor has a DC current gain range of 135 to 400 at VCE=6V and IC=1mA.
The minimum packing quantity is 3,000 pieces per reel.