| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The CPH5871-TL-W is a single N-Channel Power MOSFET with an integrated Schottky barrier diode from On Semiconductor. This composite device combines a MOSFET and Schottky diode in one package, facilitating high-density mounting. The MOSFET has a drain-source voltage rating of 30V and a continuous drain current of 3.5A. It offers low on-resistance: 52 mΩ typical at VGS=4.5V, 74 mΩ at 2.5V, and 132 mΩ at 1.8V, enabling 1.8V drive capability. The device features ESD diode-protected gate and high-speed switching with typical turn-on delay of 10 ns and rise time of 41 ns. The integrated Schottky diode has a forward voltage of 0.45V typical at 0.7A and reverse voltage of 30V. The MOSFET is housed in a surface-mount SC-74A (SOT-753) package with supplier device package 5-CPH. It is Pb-Free, Halogen Free, and RoHS compliant. Maximum power dissipation is 900 mW when mounted on a ceramic substrate. The device is suitable for high-density mounting applications requiring both switching and rectification.
| Qty | Low | High |
|---|---|---|
| 1,413+ | $0.21 | $0.21 |
| 6,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The maximum continuous drain current is 3.5 A.
The typical on-resistance is 40 mΩ and maximum is 52 mΩ at ID=2A, VGS=4.5V.
Yes, it integrates a Schottky barrier diode with a forward voltage of 0.45V typical at 0.7A and reverse voltage of 30V.
The gate threshold voltage is 0.4 V minimum and 1.3 V maximum at VDS=10V, ID=1mA.
The maximum junction temperature is 150°C and the storage temperature range is -55°C to 125°C.
Yes, the device is RoHS3 compliant, Pb-Free, and Halogen Free as stated in the datasheet.