| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,321 pcs
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1321 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The CPH3462-TL-W is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for low-power switching applications where high efficiency is required. The device features a maximum drain-source voltage of 100V and a continuous drain current rating of 1A. The on-resistance is typically 785mOhm at a gate drive of 10V and 1A drain current, ensuring low conduction losses in moderate current paths.
The gate threshold voltage is 2.6V at 1mA, allowing logic-level drive compatibility. The total gate charge is 3.4nC at 10V, and the input capacitance is 155pF at 20V drain-source, making it suitable for low-frequency switching applications. The device is rated for a maximum power dissipation of 1W at ambient temperature, and the junction temperature limit is 150°C.
The MOSFET is offered in a surface mount package, specifically the 3-CPH (TO-236-3, SC-59, SOT-23-3) package, which is compact and suitable for automated assembly. The device is RoHS3 compliant, though this compliance is unverified and should be confirmed with the manufacturer. The part is supplied in tape and reel packaging (quantity not verified).
100V.
Available in TO-236-3, SC-59, SOT-23-3, and 3-CPH.
150°C.
Yes, RoHS3 compliant (unverified).
1A at ambient temperature.
2.6V maximum at 1mA drain current.
785mOhm maximum at 1A, 10V gate drive.