| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,235 pcs
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3235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CPH3461-TL-W is an N-Channel MOSFET manufactured by onsemi. It is designed for applications requiring a maximum drain-source voltage of 250V and a maximum drain current of 350mA at ambient temperature. The device features a maximum on-resistance of 6.5 ohms at a drain current of 170mA and a gate-source voltage of 4.5V, with a maximum gate threshold voltage of 1.3V at 1mA.
This MOSFET supports gate drive voltages of 2.5V and 4.5V, making it suitable for low-voltage logic-level control. It has a maximum gate charge of 2.1nC at 4.5V and an input capacitance of 140pF at 20V, contributing to efficient switching performance in low-power circuits.
The device is housed in a compact surface-mount package (TO-236-3, SC-59, SOT-23-3) with a supplier device package designation of 3-CPH. It is rated for a maximum power dissipation of 1W at ambient temperature and can operate at junction temperatures up to 150°C.
The maximum drain-source voltage is 250V.
The maximum drain current is 350mA at ambient temperature.
The package is TO-236-3, SC-59, SOT-23-3, with a supplier device package of 3-CPH.
The maximum junction temperature is 150°C.
The maximum on-resistance is 6.5 ohms at a drain current of 170mA and a gate-source voltage of 4.5V.
The maximum gate threshold voltage is 1.3V at a drain current of 1mA.
The maximum power dissipation is 1W at ambient temperature.