| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,568 pcs
|
18568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CPH3355-TL-W is a P-Channel MOSFET from On Semiconductor designed for low-voltage power switching applications. It has a drain-to-source voltage rating of 30V and a continuous drain current of 2.5A at Ta. The on-resistance is a maximum of 156mΩ at 1A and 10V, enabling efficient conduction.
The device features a maximum gate threshold voltage of 2.6V at 1mA and a gate charge of 3.9nC at 10V, supporting low-drive-voltage operation. The input capacitance is 172pF at 10V, contributing to predictable switching behavior. It can be driven with 4V or 10V logic levels, and the gate-source voltage is rated up to ±20V.
The MOSFET is offered in a TO-236-3 / SC-59 / SOT-23-3 surface-mount package with a supplier device package of 3-CPH. It has a maximum power dissipation of 1W at Ta and a junction temperature rating of 150°C. The component is listed as RoHS3 compliant and REACH unaffected, though these compliance statuses are not independently verified.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.12 | $0.12 |
| 6,000+ | $0.11 | $0.11 |
| 9,000+ | $0.10 | $0.10 |
| 15,000+ | $0.10 | $0.10 |
| 21,000+ | $0.09 | $0.09 |
| 30,000+ | $0.09 | $0.09 |
| 75,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
TO-236-3, SC-59, SOT-23-3 (supplier device package 3-CPH).
150°C junction temperature (Tj).
It is listed as RoHS3 compliant.
2.5A (at Ta).
156mΩ at Vgs=10V, Id=1A.
Maximum 2.6V at 1mA.