| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
99,000 pcs
|
99000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,227 pcs
|
2227 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,623 pcs
|
1623 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CPH3351-TL-W is a P-Channel MOSFET manufactured by ON Semiconductor. It is designed for switching and amplification applications in low-voltage circuits, with a maximum drain-to-source voltage of 60 V and a continuous drain current of 1.8 A at ambient temperature.
This device features a maximum on-resistance of 250 mΩ at a gate-to-source voltage of 10 V and a drain current of 1 A. The maximum gate charge is 6 nC at 10 V, and the input capacitance is 262 pF at 20 V. The gate threshold voltage is up to 2.6 V at 1 mA.
The MOSFET is available in a TO-236-3, SC-59, and SOT-23-3 package, with a supplier device package of 3-CPH. It is intended for surface-mount mounting and can operate at junction temperatures up to 150 °C.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V
TO-236-3, SC-59, SOT-23-3 (3-CPH supplier package)
150 °C (TJ)
RoHS3 Compliant (from database, unverified)
1.8 A at Ta
250 mΩ max at 1A, 10V
2.6 V max at 1 mA