CPC5602CTR N-Channel MOSFET rated for 350V drain-source voltage and 5mA continuous drain current. Features depletion mode operation and low on-resistance of 14 Ohms.
Mfr Part #:

CPC5602CTR

Available from 3 distributors
Mfr Name: IXYS
IXYS
N-Channel MOSFET rated for 350V drain-source voltage and 5mA continuous drain current. Features depletion mode operation and low on-resistance of 14 Ohms.
Total Stock: 13,299 pcs
$ Price Range: $0.68 - $2.38

CPC5602CTR Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,750 pcs
6750 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,548 pcs
6548 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1 pcs
1 pcs On Request 1 On Request On Request On Request On Request On Request

CPC5602CTR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

CPC5602CTR Description

Short technical summary and product information.

The CPC5602CTR is an N-Channel depletion mode MOSFET from IXYS, designed for low-power switching and amplification applications. It features a drain-source voltage rating of 350V and a continuous drain current of 5mA at ambient temperature. The device offers a maximum on-resistance of 14 Ohms at 50mA gate drive, making it suitable for circuits requiring high voltage handling with minimal current.

 

This MOSFET operates with a gate-source voltage range of ±20V and has an input capacitance of 300pF at 0V drain-source. The maximum power dissipation is 2.5W at ambient temperature. The device is designed for surface mount assembly and is housed in a TO-261-4 / TO-261AA package, commonly referred to as SOT-223.

 

The depletion mode feature allows the MOSFET to conduct at zero gate voltage, providing normally-on operation which can be advantageous in certain circuit topologies such as current sources or start-up circuits. The operating temperature range of -40°C to 85°C makes it suitable for industrial and consumer environments.

 

The CPC5602CTR is supplied in a surface mount package, facilitating automated assembly. It is RoHS3 compliant and has a moisture sensitivity level of 1, indicating unlimited shelf life before soldering.

CPC5602CTR Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IXYS CPC5602CTR N-Channel MOSFET, 350V, 5mA, SOT-223
Subcategory: N-Channel MOSFET

CPC5602CTR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

CPC5602CTR Estimated Pricing

Qty Low High
1+ $2.38 $2.38
10+ $1.53 $1.53
50+ $1.16 $1.16
100+ $1.04 $1.04
500+ $0.83 $0.83
1,000+ $0.76 $0.76
3,000+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

CPC5602CTR Features

  • N-Channel depletion mode MOSFET.
  • 350V drain-source voltage rating.
  • 5mA continuous drain current.
  • 14 Ohm maximum on-resistance.
  • Surface mount SOT-223 package.

CPC5602CTR Applications

  • Ideal for high voltage switching circuits.
  • Suitable for current source applications.
  • Used in power management systems.
  • Works in industrial control modules.

CPC5602CTR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

350V.

What is the continuous drain current?

5mA at ambient temperature.

What is the package type?

SOT-223 (TO-261-4/TO-261AA).

What is the operating temperature range?

-40°C to 85°C.

Is this device RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the on-resistance?

14 Ohms maximum at 50mA, 350mV.

What is the maximum gate-source voltage?

±20V.

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