| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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31 pcs
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31 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay CNY75GB is a phototransistor component featuring a gallium arsenide infrared-emitting diode optically coupled to a phototransistor. It is housed in a 6-pin plastic dual inline package (DIP) and designed for PCB through-hole mounting.
Key electrical specifications include a maximum Collector Emitter Voltage of 90V, a maximum Collector Current of 50mA, and a typical Forward Voltage of 1.6V. The device also boasts an isolation voltage of 3750Vrms, a typical rise time of 3µs, and a fall time of 3.7µs. The maximum power dissipation is rated at 250mW.
Operating within a temperature range of -55°C to 100°C, the CNY75GB has a current transfer ratio of 100%. This component is suitable for applications requiring optical isolation and signal detection.
It is part of a series that includes CNY75A, CNY75B, CNY75C, CNY75GA, and CNY75GC. The DIP package and through-hole mounting make it suitable for various circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage for the CNY75GB is 90V.
The CNY75GB has a maximum collector current of 50mA.
The typical forward voltage for the CNY75GB is 1.6V.
The CNY75GB offers an isolation voltage of 3750Vrms.
The CNY75GB operates between -55°C and 100°C.
The CNY75GB is supplied in a DIP package.
The CNY75GB is designed for PCB, Through Hole mounting.