| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | 01+40 | On Request | On Request |
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The CND2050-DAF/20 from UMS is a GaAs Monolithic Microwave IC designed as a divide by 4 static prescaler. Manufactured using a 0.6µm GaAs self-aligned implanted MESFET process, this IC features a full differential input/output design, allowing for direct drive into a 50 Ohm load.
It offers a very broad operating frequency range, with a minimum input frequency of 0.5 GHz and a maximum input frequency up to 12 GHz depending on the configuration. The device supports single supply operation with voltages of +5V or -5V. Power dissipation is typically 250mW.
The CND2050-DAF/20 is available in an SOIC8 plastic package, suitable for surface mounting. Its design is optimized for high speed and low power consumption, making it suitable for various RF applications requiring frequency division.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical bias supply voltages are Vdd=5V and Vss=-5V.
It comes in an SOIC8 package.
The minimum input frequency is 0.5 GHz and maximum is 12 GHz (differential input at 5V).
At 5V supply, output power ranges from -5 dBm to -2 dBm.
Typical power dissipation is 250 mW.
The device uses 0.6µm GaAs MESFET process.