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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor CMUDW6001 is an ultra-low leakage silicon switching diode manufactured using the epitaxial planar process and molded in a SOT-523W surface mount package. This diode is specifically designed for applications demanding minimal leakage current, offering a typical leakage of 500pA at 75V reverse voltage.
Key electrical characteristics include a maximum continuous reverse voltage of 75V and a peak repetitive reverse voltage of 100V. The continuous forward current is rated at 250mA, with a high peak forward surge current capability of 4.0A for short durations (1.0μs). The forward voltage drop is specified at a maximum of 0.85V at 1.0mA, 0.95V at 10mA, and 1.1V at 100mA.
This component is suitable for various applications such as steering diodes, flyback diodes, voltage multipliers, and reverse polarity protection. Its space-saving SOT-523W package with gull-wing leads makes it ideal for compact designs. The operating and storage junction temperature range is -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous reverse voltage is 75V, and the peak repetitive reverse voltage is 100V.
The maximum continuous forward current is 250mA, with a peak repetitive forward current of 250mA and a peak forward surge current of 4A for 1μs pulses.
The maximum forward voltage is 0.85V at 1mA, 0.95V at 10mA, and 1.1V at 100mA.
The maximum reverse recovery time is 3μs, tested at IF=IR=10mA.
The CMUDW6001 is available in a surface mount SOT-523W package.
The operating and storage junction temperature range is -65°C to +150°C, and the maximum junction-to-ambient thermal resistance is 500°C/W.
The maximum power dissipation is 250mW at 25°C ambient temperature.
