| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Forward Current | |
| Diode Capacitance | |
| Forward Current | |
| Mounting Type | |
| Peak Forward Surge Current | |
| Power Dissipation | |
| Reverse Recovery Time | |
| Reverse Voltage | |
| Thermal Resistance |
The Central Semiconductor CMOSH-4E is an enhanced specification silicon Schottky diode housed in an SOD-523 surface mount package. This diode offers a peak repetitive reverse voltage of 40V and a continuous forward current of 200mA. Its electrical characteristics include a low forward voltage, with a maximum of 1.0V at 200mA and 0.80V at 100mA. The reverse current is rated at a maximum of 500nA at 25V and 25°C, increasing to 100μA at 100°C. With a typical diode capacitance of 7.0pF at 1.0V and 1.0MHz, and a reverse recovery time of 5.0ns, it is suitable for various switching applications.
The CMOSH-4E operates within a junction temperature range of -65°C to +150°C and has a power dissipation rating of 250mW at 25°C. The thermal resistance is 500°C/W. This component is designed for surface mounting, making it ideal for compact electronic designs. The marking code for this part is '4E'.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage for the CMOSH-4E is 40V.
The continuous forward current rating for the CMOSH-4E is 200mA.
The maximum forward voltage at 200mA for the CMOSH-4E is 1.0V.
The reverse recovery time for the CMOSH-4E is 5.0ns.
The CMOSH-4E is available in the SOD-523 package.
The operating and storage junction temperature range for the CMOSH-4E is -65°C to +150°C.