CM100TU-12F The Mitsubishi Electric CM100TU-12F is an IGBT module designed for high power switching applications. It offers a 600V blocking voltage and 100A continuous collector current.
Mfr Part #:

CM100TU-12F

Available from 1 distributors
Mfr Name: Mitsubishi Electronic
Mitsubishi Electronic
The Mitsubishi Electric CM100TU-12F is an IGBT module designed for high power switching applications. It offers a 600V blocking voltage and 100A continuous collector current.
✓ Total Stock: 356 pcs
$ Price Range: $0.10

CM100TU-12F Available from 1 distributor

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CM100TU-12F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Junction Temperature
Mounting Type
Storage Temperature
Tape & Reel
Thermal Resistance
Weight

CM100TU-12F Description

Short technical summary and product information.

The Mitsubishi Electric CM100TU-12F is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for general-purpose inverters, servo controls, and similar applications. This module features a robust construction with a 600V collector-emitter voltage rating and a continuous collector current capability of 100A.

 

Key electrical characteristics include a typical collector-emitter saturation voltage of 2.2V at 15V gate-emitter voltage and 100A collector current, and a typical gate-emitter threshold voltage of 1.6V. The module also specifies typical input capacitance of 2500pF and a total gate charge of 570nC.

 

Designed for high power switching, the CM100TU-12F has a maximum collector dissipation of 350W at 25°C. It operates within a junction temperature range of -40°C to +150°C and a storage temperature range of -40°C to +150°C. The module is insulated, providing 2500V AC isolation voltage.

 

This IGBT module comes in a module package with a flange mount for chassis installation. It is suitable for applications requiring reliable high-power switching performance.

CM100TU-12F Quick Information

Product Type: IGBT Module
Series: IGBTMOD™
Canonical Name: CM100TU-12F IGBT Module
Subcategory: Insulated Gate Bipolar Transistor

CM100TU-12F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CM100TU-12F Estimated Pricing

Qty Low High
1+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

CM100TU-12F Features

  • 600V collector-emitter voltage rating.
  • 100A continuous collector current.
  • Typical 2.2V saturation voltage.
  • Module package with flange mount.
  • Suitable for high power switching.

CM100TU-12F Applications

  • Used in high-voltage filtering circuits
  • Suitable for RF and microwave applications
  • Ideal for high-voltage coupling and decoupling
  • Applied in electronic circuits requiring dielectric stability

CM100TU-12F FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the CM100TU-12F?

The maximum collector-emitter voltage (VCES) for the CM100TU-12F is 600V.

What is the continuous collector current rating of the CM100TU-12F?

The CM100TU-12F has a continuous collector current (IC) rating of 100A.

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage (VCE(sat)) is 2.2V when VGE is 15V and IC is 100A.

What is the operating temperature range for this IGBT module?

The junction temperature (Tj) for the CM100TU-12F ranges from -40°C to +150°C.

What type of package does the CM100TU-12F come in?

The CM100TU-12F is supplied in a module package with a flange mount.

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