| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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356 pcs
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356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Mitsubishi Electric CM100TU-12F is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for general-purpose inverters, servo controls, and similar applications. This module features a robust construction with a 600V collector-emitter voltage rating and a continuous collector current capability of 100A.
Key electrical characteristics include a typical collector-emitter saturation voltage of 2.2V at 15V gate-emitter voltage and 100A collector current, and a typical gate-emitter threshold voltage of 1.6V. The module also specifies typical input capacitance of 2500pF and a total gate charge of 570nC.
Designed for high power switching, the CM100TU-12F has a maximum collector dissipation of 350W at 25°C. It operates within a junction temperature range of -40°C to +150°C and a storage temperature range of -40°C to +150°C. The module is insulated, providing 2500V AC isolation voltage.
This IGBT module comes in a module package with a flange mount for chassis installation. It is suitable for applications requiring reliable high-power switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the CM100TU-12F is 600V.
The CM100TU-12F has a continuous collector current (IC) rating of 100A.
The typical collector-emitter saturation voltage (VCE(sat)) is 2.2V when VGE is 15V and IC is 100A.
The junction temperature (Tj) for the CM100TU-12F ranges from -40°C to +150°C.
The CM100TU-12F is supplied in a module package with a flange mount.