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CJND2007 The CJND2007 is a Dual N-Channel MOSFET from CJ, featuring a 20V breakdown voltage and 7A continuous drain current. It utilizes advanced trench technology for excellent RDS(ON) and low gate charge.
Mfr Part #:

CJND2007

Available from 1 distributors
Mfr Name: CJ
CJ
The CJND2007 is a Dual N-Channel MOSFET from CJ, featuring a 20V breakdown voltage and 7A continuous drain current. It utilizes advanced trench technology for excellent RDS(ON) and low gate charge.
✓ Total Stock: 2,310 pcs
$ Price Range: $0.99

CJND2007 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Rayichip ✓
Non-Authorised Inventory information
2,310 pcs
On Request
2310 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

CJND2007 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
ESD Protection
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CJND2007 Description

Short technical summary and product information.

The CJND2007 is a Dual N-Channel MOSFET manufactured by JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD (CJ). This component is designed using advanced trench technology, providing excellent on-resistance (RDS(ON)) and low gate charge characteristics. It offers a drain-source breakdown voltage (V(BR)DSS) of 20V and a continuous drain current (ID) of 7A.

 

The CJND2007 exhibits varying on-resistance values depending on the gate-source voltage, with a maximum of 20mΩ at 10V, 22mΩ at 4.5V, 24mΩ at 3.8V, 26mΩ at 2.5V, and 35mΩ at 1.8V. The device is ESD protected, enhancing its robustness in handling.

 

This MOSFET is supplied in a DFNWB5x2-6L-A package, suitable for surface mount applications. Its specifications make it a suitable component for various electronic switching and amplification tasks where efficient power management is required.

CJND2007 Quick Information

Product Type: MOSFET
Canonical Name: CJND2007 Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET

CJND2007 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CJND2007 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

CJND2007 Features

  • Dual N-Channel MOSFET technology.
  • 20V drain-source breakdown voltage.
  • 7A continuous drain current.
  • Low on-resistance (RDS(on)).
  • DFNWB5x2-6L-A surface mount package.

CJND2007 Applications

  • Suitable for power switching applications.
  • Used in electronic control circuits.
  • Ideal for low-gate-charge designs.
  • Efficient for amplification tasks.

CJND2007 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the CJND2007?

The drain-source breakdown voltage (V(BR)DSS) is 20V.

What is the maximum continuous drain current for the CJND2007?

The continuous drain current (ID) is 7A.

What is the on-resistance of the CJND2007 at 10V gate-source voltage?

The maximum on-resistance (RDS(on)MAX) at 10V is 20mΩ.

What package type is the CJND2007 MOSFET supplied in?

The CJND2007 is supplied in a DFNWB5x2-6L-A package.

Does the CJND2007 have ESD protection?

Yes, the CJND2007 is ESD protected.

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