| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,219 pcs
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1219 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CJL2016 is a Dual-N MOSFET manufactured by JSCJ (JCET), designed with a Trench process. It features a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 6A. The gate-source voltage (VGS) is rated at ±10V, with a gate threshold voltage (VGS(TH)) ranging from 0.45V to 1.2V. The on-resistance (RDS(ON)) is specified at 15.7mΩ and 20mΩ under certain conditions.
This component is housed in a SOT-23-6L package, suitable for surface mounting. Its trench process technology contributes to its electrical characteristics. The part is listed with no specific ESD protection mentioned.
Applications for this MOSFET would typically involve switching or amplification circuits where a dual N-channel configuration is required. Its specifications suggest suitability for various power management and signal control tasks within electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) for the CJL2016 MOSFET is 20V.
The continuous drain current (ID) of the CJL2016 is 6A.
The gate threshold voltage (VGS(TH)) for the CJL2016 ranges from 0.45V to 1.2V.
The CJL2016 MOSFET is supplied in a SOT-23-6L package.
The CJL2016 is a Dual-N MOSFET manufactured using a Trench process.