| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,269 pcs
|
1269 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Thermal Resistance |
The Central Semiconductor CJD50 is a silicon NPN power transistor manufactured in a surface mount DPAK package. It is designed for high voltage applications such as power supplies and other switching applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 1.0A. The device also offers a maximum power dissipation of 15W at 25°C case temperature and 1.56W at 25°C ambient temperature. The operating and storage junction temperature range is -65°C to +150°C.
This transistor is suitable for applications requiring high voltage switching capabilities. Its surface mount DPAK package facilitates integration into compact electronic designs. The lead code indicates Base on pin 1, Collector on pins 2 and 4, and Emitter on pin 3.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the CJD50 is 400V.
The CJD50 has a continuous collector current (IC) rating of 1.0A.
The CJD50 is supplied in a DPAK surface mount package.
The operating and storage junction temperature range for the CJD50 is -65°C to +150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.