CJ3139KDW-G Dual P-Channel MOSFET with 20V drain-source breakdown voltage and 660mA continuous drain current in a surface-mount SOT-363 package.
Mfr Part #:

CJ3139KDW-G

Available from 1 distributors
Mfr Name: Comchip Technology
Comchip Technology
Dual P-Channel MOSFET with 20V drain-source breakdown voltage and 660mA continuous drain current in a surface-mount SOT-363 package.
Total Stock: 28 pcs
$ Price Range: $0.13 - $0.71

CJ3139KDW-G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
28 pcs
28 pcs On Request 1 On Request On Request On Request On Request On Request

CJ3139KDW-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs(th) (Max) @ Id
Weight

CJ3139KDW-G Description

Short technical summary and product information.

The CJ3139KDW-G is a dual P-Channel enhancement-mode MOSFET from Comchip Technology. It features a drain-source breakdown voltage of -20V and a continuous drain current of -660mA at 25°C ambient temperature. The device offers low on-resistance: 520mΩ maximum at VGS=-4.5V, 700mΩ maximum at VGS=-2.5V, and 950mΩ typical at VGS=-1.8V. Gate threshold voltage ranges from -0.35V to -1.1V at ID=-250µA.

 

This MOSFET is designed for high-side switching applications with fast switching speeds. Typical switching times include 32.7ns turn-on delay, 20.3ns rise time, 9ns turn-off delay, and 5.8ns fall time. Input capacitance is 170pF typical at VDS=-16V and 1MHz. The device is housed in a surface-mount SOT-363 package with solderable terminals and weighs approximately 0.006 grams.

 

The CJ3139KDW-G is RoHS3 compliant and operates over a junction temperature range of -40°C to 150°C. It is suitable for battery-powered portable devices, load switching, and power management circuits where space is limited.

CJ3139KDW-G Quick Information

Product Type: MOSFET Array
Series: CJ3139KDW-G
Canonical Name: CJ3139KDW-G Dual P-Channel MOSFET
Subcategory: Dual P-Channel

CJ3139KDW-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CJ3139KDW-G Estimated Pricing

Qty Low High
1+ $0.71 $0.71
10+ $0.44 $0.44
100+ $0.28 $0.28
500+ $0.22 $0.22
1,000+ $0.19 $0.19
3,000+ $0.16 $0.16
6,000+ $0.15 $0.15
9,000+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

CJ3139KDW-G Features

  • Dual P-Channel enhancement-mode MOSFET.
  • 20V drain-source breakdown voltage.
  • 660mA continuous drain current at 25°C.
  • Low on-resistance down to 520mΩ at 4.5V.
  • Surface-mount SOT-363 package.

CJ3139KDW-G Applications

  • High-side load switching in portable devices.
  • Power management for battery-powered circuits.
  • Signal switching in low-voltage applications.

CJ3139KDW-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the CJ3139KDW-G?

The drain-source breakdown voltage is -20V (maximum).

What is the continuous drain current rating?

The continuous drain current is -660mA at Ta=25°C.

What package is the CJ3139KDW-G available in?

It is available in a surface-mount SOT-363 package.

What is the operating junction temperature range?

The operating junction temperature range is -40°C to 150°C.

Is the CJ3139KDW-G RoHS compliant?

Yes, it is RoHS3 compliant as stated in the datasheet.

What is the on-resistance at VGS=-4.5V?

The maximum on-resistance is 520mΩ at VGS=-4.5V and ID=-1A.

What is the gate threshold voltage range?

The gate threshold voltage ranges from -0.35V (minimum) to -1.1V (maximum) at VDS=VGS and ID=-250µA.

Home
Account

Categories