| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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The CJ3139KDW-G is a dual P-Channel enhancement-mode MOSFET from Comchip Technology. It features a drain-source breakdown voltage of -20V and a continuous drain current of -660mA at 25°C ambient temperature. The device offers low on-resistance: 520mΩ maximum at VGS=-4.5V, 700mΩ maximum at VGS=-2.5V, and 950mΩ typical at VGS=-1.8V. Gate threshold voltage ranges from -0.35V to -1.1V at ID=-250µA.
This MOSFET is designed for high-side switching applications with fast switching speeds. Typical switching times include 32.7ns turn-on delay, 20.3ns rise time, 9ns turn-off delay, and 5.8ns fall time. Input capacitance is 170pF typical at VDS=-16V and 1MHz. The device is housed in a surface-mount SOT-363 package with solderable terminals and weighs approximately 0.006 grams.
The CJ3139KDW-G is RoHS3 compliant and operates over a junction temperature range of -40°C to 150°C. It is suitable for battery-powered portable devices, load switching, and power management circuits where space is limited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
| 10+ | $0.44 | $0.44 |
| 100+ | $0.28 | $0.28 |
| 500+ | $0.22 | $0.22 |
| 1,000+ | $0.19 | $0.19 |
| 3,000+ | $0.16 | $0.16 |
| 6,000+ | $0.15 | $0.15 |
| 9,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20V (maximum).
The continuous drain current is -660mA at Ta=25°C.
It is available in a surface-mount SOT-363 package.
The operating junction temperature range is -40°C to 150°C.
Yes, it is RoHS3 compliant as stated in the datasheet.
The maximum on-resistance is 520mΩ at VGS=-4.5V and ID=-1A.
The gate threshold voltage ranges from -0.35V (minimum) to -1.1V (maximum) at VDS=VGS and ID=-250µA.