| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,597 pcs
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2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| FET Type | |
| Input Capacitance | |
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The CJ2312 is an N-Channel MOSFET designed for applications such as DC/DC converters and load switching for portable devices. It is manufactured by Changjing Electronics Technology and comes in a SOT-23 package.
Key electrical characteristics include a drain-source voltage of 20V and a continuous drain current of 5A at 25°C. The device features a maximum power dissipation of 0.35W and a thermal resistance from junction to ambient of 357°C/W. The gate-source threshold voltage is typically between 0.45V and 1.0V.
Additional specifications include a typical input capacitance of 865pF, output capacitance of 105pF, and reverse transfer capacitance of 55pF at 1MHz. The on-state resistance (Rds(on)) is specified at a maximum of 31.8mΩ at 5A and 4.5V gate-source voltage.
The operating temperature ranges from -50°C to +150°C, with a junction temperature limit of 150°C. The MOSFET is suitable for surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20 volts.
The CJ2312 is housed in a SOT-23 surface-mount package.
The maximum junction temperature rating is 150 degrees Celsius.
The gate threshold voltage ranges from 0.45 to 1.0 volts at 250 microamperes drain current.
The continuous source-drain diode current rating is 1.04 amperes.
The input capacitance is typically 865 picofarads.