| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,000 pcs
|
120000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
3,147 pcs
|
3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
504 pcs
|
504 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Gate Charge | |
| Mounting Type |
The CJ2310 is an N-Channel MOSFET manufactured by JCST, designed with advanced trench technology. This component provides excellent on-resistance (RDS(ON)) and low gate charge, making it suitable for various switching applications.
Key electrical characteristics include a drain-source voltage rating of 60V and a continuous drain current of 3A at Vgs=10V, with a typical RDS(ON) of 105mOhm. The device can operate with a gate voltage as low as 2.5V, enhancing its flexibility in low-voltage designs.
Packaged in a SOT-23 surface-mount case, the CJ2310 is designed for efficient integration into compact electronic circuits. Its typical input capacitance is 247pF. This MOSFET is particularly well-suited for use as a battery protection component or in other general-purpose switching applications where reliable performance and low on-resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
SOT-23.
105 milliohms at a gate voltage of ten volts.
Three amperes under specified test conditions.
Six nanocoulombs.
Two hundred forty-seven picofarads.