| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 2021 | On Request | On Request |
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The CJ2310 is an N-Channel MOSFET manufactured by JSCJ, utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for battery protection and various switching applications.
Key electrical characteristics include a Drain-Source Voltage of 60V, a Gate-Source Voltage range of ±20V, and a Continuous Drain Current of 3A. The device exhibits a low Drain-Source On-Resistance of 105mΩ at VGS=10V and 3A, and 125mΩ at VGS=4.5V and 3A. Dynamic characteristics include an Input Capacitance of 247pF and Output Capacitance of 34pF.
This MOSFET is available in a surface-mount SOT-23 package. It operates within a junction and storage temperature range of -55°C to +150°C. The device is designed for high power and current handling capability and is lead-free.
Applications include battery switches and DC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the CJ2310 MOSFET is 60V.
The CJ2310 has a continuous drain current rating of 3A.
The typical gate threshold voltage for the CJ2310 is 0.5V.
The maximum on-resistance of the CJ2310 at 10V gate-source voltage and 3A drain current is 105mΩ.
The CJ2310 MOSFET is supplied in a SOT-23 package.
The CJ2310 MOSFET is suitable for use as a battery protection or in other switching applications, such as battery switches and DC/DC converters.