| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33,204 pcs
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33204 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
6,838 pcs
|
6838 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The CJ2301 S1 is a Dual P-Channel MOSFET manufactured by CJ. This component is designed for industrial applications and offers a drain-source breakdown voltage of 20V and a continuous drain current of 2.3A. Its on-state resistance is specified at 112mΩ at 4.5V and 2.8A, with a typical gate-source threshold voltage of 1V at 250uA.
The MOSFET has a maximum power dissipation of 350mW and an input capacitance of 405pF at 10V. The gate charge is 16nC. The CJ2301 S1 is housed in a compact SOT-23 SMD package, making it suitable for surface-mount designs.
Key electrical characteristics include a 20V gate-source voltage rating and a typical FET type of 2individualPChannel. The component is suitable for various electronic circuits requiring P-channel MOSFET functionality in a surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The continuous drain current is 2.3A.
The on-state resistance is 112mΩ at 4.5V and 2.8A.
The gate-source threshold voltage is 1V at 250uA.
The maximum power dissipation is 350mW.
The input capacitance is 405pF at 10V.
The CJ2301 S1 is supplied in a SOT-23 SMD package.