| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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78 pcs
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78 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CHA5115-QDG is a monolithic two-stage GaAs Medium Power Amplifier designed for X-band applications. It operates within an RF bandwidth of 8 to 12 GHz, providing a typical gain of 24 dB. This amplifier delivers a typical output power of 28 dBm at 3dB gain compression, with a maximum saturation output power of 29 dBm and a P-1dB output power of 27.5 dBm.
Designed for demanding applications, the CHA5115-QDG requires a typical bias voltage of 8V and a bias current of 190mA. It is supplied in a RoHS compliant Surface Mount Device (SMD) package, suitable for various integration needs in aerospace, defense, and instrumentation markets.
This amplifier is well-suited for systems requiring reliable power amplification in the X-band frequency range. Its specifications make it a valuable component for signal processing and transmission in defense and space applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RF bandwidth of the CHA5115-QDG ranges from 8 GHz to 12 GHz.
The typical gain of the CHA5115-QDG is 24 dB.
The output power at 3dB gain compression is typically 28 dBm.
The CHA5115-QDG is packaged in an SMD (Surface Mount Device) form factor.
The bias voltage for the CHA5115-QDG is 8 V.
Yes, the CHA5115-QDG is RoHS3 compliant.