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CGHV40050P

The MACOM Technology Solutions CGHV40050P is a 50V Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). It offers broadband performance up to 4 GHz.

✓ Total Stock: 60 pcs

$ Price Range: $9.68

CGHV40050P Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	60 pcs On Request	60 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

CGHV40050P Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	MACOM Technology Solutions
Approval Agency	DC - 4.0 GHz
Efficiency	53%
Frequency Range	DC - 4.0 GHz
Operating Voltage	50 V
Output Power	77 W
Storage Temperature	-65 to +150 °C

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CGHV40050P Description

Short technical summary and product information.

The CGHV40050P from MACOM Technology Solutions is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Operating from a 50-volt rail, this device provides a general-purpose, broadband solution suitable for a variety of RF and microwave applications up to 4 GHz.

Key electrical characteristics include a typical output power of 77 W and a small signal gain of 17.5 dB at 1.8 GHz. The device achieves 53% efficiency at saturation power (PSAT). It supports operation up to 4 GHz and is designed for use in applications ranging from narrow band UHF, L and S Bands, as well as multi-octave bandwidth amplifiers.

The CGHV40050P is available in a 2-lead flange and pill package. It is rated for a maximum drain-source voltage of 150V and a gate-to-source voltage range of -10V to +2V. The maximum operating junction temperature is 225°C.

Large signal models are available for ADS and MWO, facilitating design integration. This HEMT is well-suited for high-power RF applications requiring wide bandwidth and high efficiency.

CGHV40050P Quick Information

Product Type: GaN HEMT

Canonical Name: CGHV40050P GaN HEMT

Subcategory: GaN HEMT

CGHV40050P Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

CGHV40050P Estimated Pricing

Qty	Low	High
1+	$9.68	$9.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

CGHV40050P Features

Operates up to 4 GHz frequency range.
Provides 77 W typical output power.
Achieves 53% efficiency at PSAT.
Rated for 50 V DC operation.
Available in 2-lead flange and pill package.

CGHV40050P Applications

Suitable for RF and microwave applications.
Ideal for narrow band UHF, L, and S Bands.
Used in multi-octave bandwidth amplifiers.
Designed for high-power broadband solutions.

CGHV40050P FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum operating frequency of the CGHV40050P?

The CGHV40050P operates up to 4 GHz.

What is the typical output power of the CGHV40050P?

The typical output power is 77 W.

What is the small signal gain at 1.8 GHz?

The small signal gain at 1.8 GHz is 17.5 dB.

What is the efficiency at saturation power (PSAT)?

The efficiency at PSAT is 53%.

What is the operating voltage for the CGHV40050P?

The device operates from a 50 V rail.

What are the package types available for the CGHV40050P?

The CGHV40050P is available in package types 440193 & 440206, specifically a 2-lead flange and pill package.