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113 pcs
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113 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CreeLED, Inc. CGHV35060MP is a 60W Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) optimized for S Band performance. This RF Mosfet Hemt is suitable for applications in S Band Radar and LTE base stations, operating within typical bands of 2.7-3.1 GHz and 3.1-3.5 GHz. It features a power output of 60W and operates at a voltage of 50V, providing a gain of 14.5 dB.
The CGHV35060MP is an input-matched transistor, designed to offer optimal gain, power, and efficiency. It is housed in a compact 6.5mm x 4.4mm plastic surface mount (SMT) package, making it suitable for space-constrained designs. The component is specified for a current of 125mA.
This device is designed for high-frequency applications requiring robust performance and efficiency. Its GaN HEMT technology enables superior power handling and thermal characteristics compared to traditional silicon-based devices. The surface mount package facilitates easy integration into printed circuit boards for automated assembly processes.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The power output is 60W.
The operating frequency range is 2.7-3.5 GHz.
The voltage rating is 50V.
The gain is 14.5 dB.
It is in a 20-TSSOP surface mount package.