| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
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The CET CEP83A3 is a silicon N-channel enhancement mode Power MOSFET designed for high power and current handling capabilities. It features a super high dense cell density for extremely low RDS(ON), with a typical value of 4.2mΩ at VGS = 10V and ID = 50A.
This MOSFET has a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 100A at 25°C. The maximum power dissipation is 100W at 25°C. Its operating and storage temperature range is from -55°C to +175°C.
The CEP83A3 is suitable for various applications including Battery Management Systems, DC/DC Converters, High Side Switches, Industrial Control, and Low Side Switches. It comes in a TO220-3L package with through-hole mounting.
Key electrical characteristics include a gate threshold voltage between 1V and 3V, and low on-resistance values. Dynamic characteristics such as input capacitance, output capacitance, and reverse transfer capacitance are also specified, along with switching times and gate charge parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current at 25°C is 100A.
The typical static drain-source on-resistance is 4.2mΩ.
The CEP83A3 is supplied in a TO220-3L package.
The operating and storage temperature range is -55°C to +175°C.