| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,100 pcs
|
22100 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
3,085 pcs
|
3085 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
1,837 pcs
|
1837 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The CEM9435A from Chino-Excel Technology (CET) is a P-Channel Enhancement Mode Field Effect Transistor designed for surface mount applications. This MOSFET features a drain-source breakdown voltage of -30V and a continuous drain current capability of -5.3A at 25°C. Its super high dense cell design contributes to an extremely low RDS(ON), measuring 50mΩ at VGS = -10V and 90mΩ at VGS = -4.5V. This high power and current handling capability makes it suitable for various power management and switching applications. The component is acquired as a lead-free product.
Designed for efficient power handling, the CEM9435A is housed in a surface mount package, facilitating integration into compact electronic designs. Its electrical characteristics, including low on-state resistance and robust breakdown voltage, make it a reliable choice for engineers seeking performance and efficiency in their circuits. The product is manufactured by Chino-Excel Technology, a provider of electronic components and semiconductors.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -30V.
The continuous drain current is -5.3A.
The on-state resistance is 50mΩ.
The on-state resistance is 90mΩ.
The CEM9435A is in a surface mount package.