CEM4435 The CET CEM4435 is a P-Channel Enhancement Mode Field Effect Transistor. It features a Drain-Source Voltage of 30V and a typical Drain-Source Resistance of 24mΩ.
Mfr Part #:

CEM4435

Available from 2 distributors
Mfr Name: CET
CET
The CET CEM4435 is a P-Channel Enhancement Mode Field Effect Transistor. It features a Drain-Source Voltage of 30V and a typical Drain-Source Resistance of 24mΩ.
✓ Total Stock: 8,748 pcs
$ Price Range: $0.10

CEM4435 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,743 pcs
7743 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
1,005 pcs
1005 pcs On Request 1 On Request On Request 02+ On Request On Request

CEM4435 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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CEM4435 Description

Short technical summary and product information.

The CEM4435 from CET is a P-Channel Enhancement Mode Field Effect Transistor. This component is designed for electronic circuits requiring a reliable P-channel MOSFET. It offers a maximum Drain-Source Voltage (VDS) rating of 30V, making it suitable for a range of applications.

 

The typical Drain-Source Resistance (RDS(on)) is specified at 24mΩ, indicating efficient current handling. This specification is crucial for minimizing power loss and heat generation in the application. The transistor operates as an enhancement mode device, meaning it is normally off and requires a gate-source voltage to turn on.

 

While specific application details are not provided, P-channel MOSFETs like the CEM4435 are commonly used in power switching, load switching, and as high-side drivers. Its specifications suggest suitability for moderate power applications where a P-channel device is preferred for circuit design simplicity or compatibility with existing voltage rails.

 

Further details regarding package type, mounting, and specific operating conditions would typically be found in the manufacturer's datasheet. However, based on available information, the CEM4435 presents a solid option for designs needing a 30V P-channel FET with low on-resistance.

CEM4435 Quick Information

Product Type: Field Effect Transistor
Canonical Name: CEM4435 P-Channel Enhancement Mode Field Effect Transistor
Subcategory: P-Channel Enhancement Mode Field Effect Transistor

CEM4435 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CEM4435 Estimated Pricing

Qty Low High
1+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

CEM4435 Features

  • P-Channel Enhancement Mode Field Effect Transistor
  • 30V maximum Drain-Source Voltage
  • 24mΩ typical Drain-Source Resistance
  • Suitable for switching applications

CEM4435 Applications

  • Suitable for high-current switching applications.
  • Ideal for power management circuits.
  • Used in motor control and inverter circuits.
  • Applicable in portable electronic devices.
  • Suitable for load switching in industrial equipment.

CEM4435 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the typical drain-source resistance (RDS(on)) of the CEM4435?

The typical drain-source resistance (RDS(on)) of the CEM4435 is 24 milliohms.

What is the maximum drain-source voltage (VDS) for the CEM4435?

The maximum drain-source voltage (VDS) for the CEM4435 is 30 volts.

What category does the CEM4435 belong to?

The CEM4435 belongs to the film capacitors category.

Is the CEM4435 RoHS compliant?

RoHS compliance status is unverified; it is marked as RoHS3 compliant but this is low confidence.

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