BSC079N03S G
VBsemi
The VBsemi Elec BSC079N03S G is an N-Channel MOSFET designed for various electronic applications. It features a 30V voltage rating and a low on-resistance of 7mΩ at 10V.
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1,538 pcs
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1538 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CEB83A3G from CET is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance applications. It features a 30V drain-source voltage and a continuous drain current capability of 98A. The device boasts a very low on-resistance (RDS(ON)) of 2.4mΩ at a gate-source voltage of 10V, and 2.7mΩ at 4.5V, thanks to its super high dense cell design. This high power and current handling capability makes it suitable for demanding applications.
The CEB83A3G is available in both TO-220 and TO-263 packages, offering flexibility for different mounting requirements. The product is also lead-free.
This MOSFET is suitable for various power switching and amplification tasks where efficiency and robust performance are critical.
| Qty | Low | High |
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| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the CEB83A3G is 30V.
The continuous drain current of the CEB83A3G is 98A.
The typical RDS(ON) at VGS = 10V for the CEB83A3G is 2.4mΩ.
The CEB83A3G is available in TO-220 and TO-263 packages.
The CEB83A3G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the CEB83A3G is 1 Unlimited.
