BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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1,538 pcs
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1538 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CEB83A3G is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Chino-Excel Technology Corp. It features a super high dense cell design for extremely low RDS(ON), with typical values of 4.2 mΩ at VGS = 10V and 6.2 mΩ at VGS = 4.5V. The device has a breakdown voltage of 30V and a continuous drain current capability of up to 102A.
This MOSFET is designed for high power and current handling. It is available in both TO-220 and TO-263 (DD-PAK) package types, supporting surface mount and through-hole mounting respectively. The product is lead-free.
Key electrical characteristics include a 30V drain-source breakdown voltage and a maximum continuous drain current of 102A. The low on-resistance values make it suitable for applications requiring efficient power switching.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage (V(BR)DSS) of the CEB83A3G is 30 V.
The maximum continuous drain current (ID) for the CEB83A3G is 102 A.
The typical drain-source on-resistance (RDS(ON)) of the CEB83A3G at VGS = 10V is 4.2 mOhm. Another typical value at VGS = 10V is 2.4 mOhm.
The typical drain-source on-resistance (RDS(ON)) of the CEB83A3G at VGS = 4.5V is 6.2 mOhm. Another typical value at VGS = 4.5V is 2.7 mOhm.
The CEB83A3G is available in TO-263 (DD-PAK) and TO-220 packages.
The CEB83A3G supports Surface Mount.