DistyParts Icon
CE3512K2-C1 The CE3512K2-C1 is a 12 GHz super low noise pHEMT FET from CEL. It features a typical noise figure of 0.30 dB and associated gain of 13.7 dB at 2V, 10 mA.
Mfr Part #:

CE3512K2-C1

Available from 1 distributors
Mfr Name: California Eastern Laboratories
California Eastern Laboratories
The CE3512K2-C1 is a 12 GHz super low noise pHEMT FET from CEL. It features a typical noise figure of 0.30 dB and associated gain of 13.7 dB at 2V, 10 mA.
✓ Total Stock: 2,000 pcs
$ Price Range: $0.87 - $1.70

CE3512K2-C1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

CE3512K2-C1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Rating (Amps)
Frequency
Gain
Mounting Type
Noise Figure
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Voltage
View Similar Products (0)

CE3512K2-C1 Description

Short technical summary and product information.

The CE3512K2-C1 is a super low noise pHEMT FET designed for Ku-band LNB applications. It operates at 12 GHz with a typical noise figure of 0.30 dB and associated gain of 13.7 dB at VDS=2V and ID=10 mA. The device is housed in a hollow (air cavity) plastic 4-Micro-X package, suitable for surface mount assembly. Absolute maximum ratings include VDS of 4.0 V, VGS of -3.0 V, and total power dissipation of 125 mW. The recommended operating range is VDS from 1 to 3 V and ID from 5 to 15 mA. This FET is ideal for first-stage low noise amplification in satellite receivers.

CE3512K2-C1 Quick Information

Product Type: RF FET
Canonical Name: CEL CE3512K2 12 GHz Super Low Noise pHEMT FET
Subcategory: Low Noise FET

CE3512K2-C1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CE3512K2-C1 Estimated Pricing

Qty Low High
1+ $1.70 $1.70
10+ $1.14 $1.14
100+ $0.95 $0.95
500+ $0.92 $0.92
2,500+ $0.90 $0.90
5,000+ $0.87 $0.87
10,000+ $0.87 $0.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

CE3512K2-C1 Features

  • Super low noise figure: 0.30 dB typical at 12 GHz.
  • High associated gain: 13.7 dB typical at 12 GHz.
  • Hollow (air cavity) plastic package for RF performance.
  • Surface mount 4-Micro-X package.
  • Designed for Ku-band LNB applications.

CE3512K2-C1 Applications

  • Ideal for Ku-band LNB first stage low noise amplification.
  • Suitable for satellite receiver front-end circuits.
  • Used in 12 GHz RF amplifier designs.

CE3512K2-C1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the recommended operating drain-to-source voltage for the CE3512K2-C1?

The recommended VDS range is +1 V to +3 V, with typical operation at +2 V.

What package does the CE3512K2-C1 come in?

The CE3512K2-C1 is available in a 4-Micro-X hollow (air cavity) plastic package.

What is the operating temperature range of the CE3512K2-C1?

The operating temperature range is -55°C to +125°C.

Is the CE3512K2-C1 RoHS compliant?

The CE3512K2-C1 is listed as RoHS3 compliant, but this status is unverified.

What is the typical noise figure of the CE3512K2-C1 at 12 GHz?

The typical noise figure is 0.30 dB at VDS=2V, ID=10 mA, f=12 GHz.

What is the typical associated gain of the CE3512K2-C1?

The typical associated gain is 13.7 dB at VDS=2V, ID=10 mA, f=12 GHz.

What technology is used in the CE3512K2-C1?

The device uses pHEMT FET technology.

Home
Account

Categories