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CE3512K2 The CE3512K2 is a 12 GHz super low noise pHEMT FET from CEL. It features a typical noise figure of 0.30 dB and associated gain of 13.7 dB at 2 V, 10 mA.
Mfr Part #:

CE3512K2

Available from 2 distributors
Mfr Name: California Eastern Laboratories
California Eastern Laboratories
The CE3512K2 is a 12 GHz super low noise pHEMT FET from CEL. It features a typical noise figure of 0.30 dB and associated gain of 13.7 dB at 2 V, 10 mA.
✓ Total Stock: 510 pcs
$ Price Range: $1.15 - $2.20

CE3512K2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
500 pcs
On Request
500 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
10 pcs
On Request
10 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

CE3512K2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Rating (Amps)
Frequency
Gain
Mounting Type
Noise Figure
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage
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CE3512K2 Description

Short technical summary and product information.

The CE3512K2 is a super low noise pHEMT FET designed for 12 GHz operation, housed in a hollow plastic Micro-X package. It delivers a typical noise figure of 0.30 dB and associated gain of 13.7 dB at VDS = 2 V and ID = 10 mA.

 

This device is optimized for Ku-band LNB first-stage applications. Key electrical characteristics include a saturated drain current range of 27 to 68 mA, transconductance of 54 to 69 mS, and a gate-to-source cut-off voltage between -1.10 V and -0.39 V.

 

The CE3512K2 is surface mountable and supplied in embossed tape on 10,000-piece reels. Absolute maximum ratings include a drain-to-source voltage of 4 V and a channel temperature of 150 °C.

CE3512K2 Quick Information

Product Type: RF Low Noise pHEMT FET
Canonical Name: CEL CE3512K2 RF Low Noise pHEMT FET
Subcategory: RF Low Noise FET

CE3512K2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CE3512K2 Estimated Pricing

Qty Low High
1+ $2.20 $2.20
10+ $1.49 $1.49
100+ $1.22 $1.22
500+ $1.20 $1.20
1,000+ $1.17 $1.17
2,000+ $1.15 $1.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

CE3512K2 Features

  • Super low noise figure of 0.30 dB typical.
  • High associated gain of 13.7 dB typical.
  • Designed for 12 GHz operation.
  • Hollow plastic Micro-X SMD package.
  • Supplied in tape and reel packaging.

CE3512K2 Applications

  • Ideal for Ku-band LNB first-stage amplifiers.
  • Suitable for low-noise RF front-end circuits.
  • Used in satellite communication receivers.
  • Applicable in 12 GHz microwave systems.

CE3512K2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the typical noise figure of the CE3512K2 at 12 GHz?

The typical noise figure is 0.30 dB, with a maximum of 0.50 dB, at VDS = 2 V, ID = 10 mA, f = 12 GHz.

What is the package type of the CE3512K2?

The CE3512K2 is housed in a 4-Micro-X plastic surface-mount package.

What is the RoHS compliance status of the CE3512K2?

The CE3512K2 is listed as RoHS3 Compliant, but this information is unverified.

What is the typical associated gain of the CE3512K2?

The typical associated gain is 13.7 dB, with a minimum of 12.5 dB, at VDS = 2 V, ID = 10 mA, f = 12 GHz.

What is the maximum drain current rating for the CE3512K2?

The maximum drain current is 15 mA (recommended operating range). The absolute maximum drain current is not specified; the saturated drain current (IDSS) maximum is 68 mA.

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