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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Current - Average Rectified (Io) | |
| Current - Reverse Leakage @ Vr | |
| Forward Voltage (Maximum @ IF = 10 mA) | |
| Forward Voltage (Maximum @ If = 250 mA) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Junction | |
| Package / Case | |
| Power Dissipation (Max) | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Terminals | |
| Thermal Resistance Junction-to-Ambient | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| Weight |
The CDBW46-G is a small signal Schottky diode from Comchip Technology, designed for surface mount applications. It features a maximum reverse voltage of 100V and an average rectified forward current of 150mA.
Key electrical characteristics include a low forward voltage of 500mV at 10mA and 1V at 250mA, and a reverse leakage current of 20µA at 75V. The diode has a typical junction capacitance of 20pF at 0V and 1MHz, making it suitable for high-speed switching applications.
The device is housed in a standard SOD-123 package and is rated for a maximum junction temperature of 150°C. It has a maximum power dissipation of 625mW and a thermal resistance of 200°C/W junction-to-ambient.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.02 | $0.02 |
| 6,000+ | $0.02 | $0.02 |
| 15,000+ | $0.01 | $0.01 |
| 30,000+ | $0.01 | $0.01 |
| 75,000+ | $0.01 | $0.01 |
| 150,000+ | $0.01 | $0.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VRRM) is 100V.
The maximum average rectified forward current (Io) is 150mA.
The forward voltage is 500mV maximum at 10mA and 1V maximum at 250mA.
The CDBW46-G is available in a surface-mount SOD-123 package.
The maximum junction temperature is 150°C.
The maximum reverse leakage current is 20µA at 75V.
The typical diode capacitance is 20pF at 0V and 1MHz.