| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,218 pcs
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2218 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
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1,721 pcs
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1721 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,431 pcs
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1431 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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714 pcs
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714 pcs | On Request | 1 | On Request | On Request | 513 | On Request | 2026-05-08 03:16:07 | |
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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66 pcs
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66 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Voltage |
The Texas Instruments CD4011BM is a high-speed CMOS logic gate IC featuring four independent 2-input NAND gates. This device is designed for a wide operating voltage range from 3V to 18V, making it versatile for various applications.
Key electrical characteristics include a maximum propagation delay of 90ns at 15V and 50pF, and a typical propagation delay of 60ns at 10V. The input logic levels range from 3.5V to 11V. It operates reliably within a temperature range of -55°C to 125°C.
The CD4011BM is available in a 14-SOIC surface mount package, suitable for standard PCB assembly. Its buffered inputs and outputs, along with standardized symmetrical output characteristics, ensure consistent performance. The maximum input current is low, at 1µA over the full temperature range and 100nA at 25°C.
This component meets JEDEC Tentative Standard No. 13B specifications for 'B' Series CMOS Devices. It is suitable for digital logic applications requiring reliable NAND gate functionality.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3V to 18V.
14-SOIC (0.154", 3.90mm Width) surface mount.
-55°C to 125°C.
Maximum 90ns at 15V, 50pF; typical 60ns at 10V, 50pF.
1V at VDD=5V, 2V at VDD=10V, 2.5V at VDD=15V.
100nA at 18V and 25°C; 1µA over full temperature range.
Four independent 2-input NAND gates.